GaP Semi-Insulated Wafers P Type N Type 400um 500um Green LED Red Green Light Emission
Description:
Gallium phosphide is a commonly used semiconductor material, which has the characteristics of high conductivity and high photoelectric conversion efficiency. Gallium phosphide can be used in the manufacture of solar cells, photodetectors, photoconductance and LED devices. Gallium phosphide (GaP) is an important photonic material that has long been used as an active material in green light-emitting diodes. GaP is an indirect bandgap (2.26 eV) semiconductor with a high refractive index (n> 3) and third-order nonlinear, and transparent in the wavelength range of 450 nm to 11μm. In addition, GaP, as a non-centrosymmetric crystal with a large second-order nonlinear and non-zero piezoelectric coefficient, is well suited for future integrated photonics applications in visible, near infrared, telecommunication and mid-infrared bands.
Features:
Gallium Phosphide GaP, an important semiconductor of unique electrical properties as other III-V compound materials, crystallizes in the thermodynamically stable cubic ZB structure, is an orange-yellow semitransparent crystal material with an indirect band gap of 2.26 eV (300K), which is synthesized from 6N 7N high purity gallium and phosphorus, and grown into single crystal by Liquid Encapsulated Czochralski (LEC) technique. Gallium Phosphide crystal is doped sulfur or tellurium to obtain n-type semiconductor, and zinc doped as p-type conductivity for further fabricating into desired wafer, which has applications in optical system, electronic and other optoelectronics devices. Single Crystal GaP wafer can be prepared Epi-Ready for your LPE, MOCVD and MBE epitaxial application. High quality single crystal Gallium phosphide GaP wafer p-type, n-type or undoped conductivity at Western Minmetals (SC) Corporation can be offered in size of 2″and 3” (50mm, 75mm diameter) , orientation <100>,<111> with surface finish of as-cut, polished or epi-ready process.
Technical Parameters:
| Items | Parameters |
| Colour | Transparent Orange Red |
| Diameter | 2’’ 4’’ |
| Thickness | 400um 500um |
| Type | N-type P-type |
| Density | 4.350 g/cm3 |
| Melting point | 1500°C |
| Growth method | VPE |
| Solubility | soluble |
| Orientation | (100) |
| Refractive index | 4.30 |
| Warp | 5um |
| Bow | 5um |
| TTV | 5um |
| Grade | R |
| Material | GaP Wafers |
| Origin | China |
Applications:
LED Illumination Devices: GaP serves as an LED material used in illumination and display devices.
Solar Cells: Employed in manufacturing solar panels for converting solar energy into electrical power.
Spectral Analytical Instruments: Used in laboratories and scientific research for optical spectral analysis.
Semiconductor Amplifiers: Applied in amplifiers and integrated circuits for RF and microwave applications.
Photodetectors: Utilized in optical sensors and detectors for optical measurements and sensing applications.
Microwave RF Devices: Applied in high-frequency and microwave circuits as high-performance components.
High-Temperature Electronic Devices: Used in electronic devices operating in high-temperature environments.
High-Frequency Electronic Devices: Employed in high-frequency electronic systems, such as RF power amplifiers.
Other product:
GaN wafer:
FAQ:
Q: What is the Brand Name of the GaP Semi-Insulated Wafers?
A: The Brand Name of the GaP Semi-Insulated Wafers is ZMSH.
Q: What is the Certification of the GaP Semi-Insulated Wafers?
A: The Certification of the GaP Semi-Insulated Wafers is ROHS.
Q: Where is the Place of Origin of the GaP Semi-Insulated Wafers?
A: The Place of Origin of the GaP Semi-Insulated Wafers is CHINA.
Q: What is the MOQ of the GaP Semi-Insulated Wafers at one time?
A: The MOQ of the GaP Semi-Insulated Wafers is 25pcs at one time.
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GaP Semi-Insulated Wafers P Type N Type 400um 500um Green LED Red Green Light Emission Images
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