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4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type

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4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type

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Brand Name : zmsh

Model Number : 6INCH GaAs wafer

Certification : ROHS

Place of Origin : china

MOQ : 10pcs

Price : by case

Supply Ability : 500pcs/month

Delivery Time : 1-4weeks

Packaging Details : PET film in 100-grade cleaning room

material : MONOcrystal GaAs

industry : semicondutor wafer For ld or led

application : semiconductor substrate, led chip, optical glass window,device substrates

method : CZ

size : 2inch~6inch

Thickness : 0.425mm

surface : cmp/etched

doped : Si-doped

MOQ : 10PCS

grade : research grade/dummy grade

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4Inch GaAs Wafers Gallium Arsenide Substrates DSP
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GaAs wafer

Gallium arsenide (GaAs) is one of the important and mature Ⅲ-Ⅴ compound semiconductor materials, which is widely used in the field of optoelectronics and microelectronics. Gallium arsenide materials are mainly divided into two categories: semi-insulated gallium arsenide materials and semiconductor gallium arsenide materials. Semi-insulated gallium arsenide materials are mainly used to produce integrated circuits with MESFET, HEMT and HBT structures. Mainly used in radar, microwave and millimeter wave communication, ultra-high speed computer and optical fiber communication and other fields. Semiconductor gallium arsenide materials are mainly used in semiconductor lasers (LD), semiconductor light-emitting diodes (LED), near-infrared lasers, quantum well high-power lasers and high-efficiency solar cells.

Specification detail
Type/Dopant 导电类型/掺杂元素 Semi-Insulated P-Type/Zn N-Type/Si N-Type/Si
Application 应用 Micro Eletronic LED Laser Diode
Growth Method 长晶方式 VGF
Diameter 直径 2", 3", 4", 6"
Orientation 晶向 (100)±0.5°
Thickness 厚度 (µm) 350-625um±25um
OF/IF 参考边 US EJ or Notch
Carrier Concentration 载流子浓度 - (0.5-5)*1019 (0.4-4)*1018 (0.4-0.25)*1018
Resistivity 电阻率 (ohm-cm) >107 (1.2-9.9)*10-3 (1.2-9.9)*10-3 (1.2-9.9)*10-3
Mobility 电子迁移率 (cm2/V.S.) >4000 50-120 >1000 >1500
Etch Pitch Density 位错密度(/cm2) <5000 <5000 <5000 <500
TTV 平整度 [P/P] (µm) <5
TTV 平整度 [P/E] (µm) <10
Warp 翘曲度 (µm) <10
Surface Finished 表面加工 P/P, P/E, E/E

4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type


ABOUT OUR ZMKJ

ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our
good reputatiaons. so we also can provide some other materials substrates as like:
Related products: Ge wafer
4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type4inch GaAs Wafers Gallium Arsenide Substrates DSP N type P type
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and by FOB
and pay condition of 50％ deposit,50％ before delivery.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.


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DSP Gallium Arsenide Substrates

      

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