SiC Cantilever Paddle with CVD Coating for Horizontal Boat Loading
A Silicon Carbide (SiC) Cantilever Paddle is a high-performance ceramic structural component manufactured using reaction-bonded silicon carbide (RBSiC) process. It is primarily designed for carrying and transporting wafers in high-temperature process environments within the semiconductor and photovoltaic industries. It operates reliably in atmospheres containing oxygen, nitrogen, and trace hydrogen chloride, withstanding temperatures of approximately 1250°C for long-term stable operation. Leveraging the exceptional material properties of silicon carbide—extremely high hardness, high flexural strength, low coefficient of thermal expansion, excellent thermal stability, and chemical inertness—the cantilever paddle ensures uniform heating, prevention of deformation, and reduction of contamination and particle generation in wafers under high temperatures. It significantly extends service life, increases load capacity and production efficiency, and reduces overall maintenance costs. Its lightweight design and high surface smoothness also support precise automated robotic handling, meeting high-precision process requirements.
SiC Cantilever Paddle Key Parameters
The following are the core performance parameters of silicon carbide cantilever paddles, directly related to their material characteristics, functions, and applications:
| Parameter Category | Parameter Name | Typical Value/Range |
Material Characteristics
| Material Purity | SiC > 99.999% |
| Coefficient of Thermal Expansion | ~4.5×10⁻⁶/°C |
| Flexural Strength | >2500 MPa |
| Maximum Operating Temperature | 1350°C (long-term) |
| Mohs Hardness | 9 |
| Density | 3.02 g/cm³ |
Functional Characteristics
| Surface Smoothness | High (specific value not provided) |
| Corrosion Resistance | Resists acids, alkalis, and plasma erosion |
Application Characteristics
| Working Atmosphere | Oxygen, nitrogen, hydrogen chloride, etc. |
| Service Life | 35 times longer than metal/quartz |
SiC Cantilever Paddle Features
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3D printing integrated forming.
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Base material impurity content <300 ppm.
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CVD silicon carbide coating base material impurity content <5 ppm.
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High load-bearing capacity at high temperatures.
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High thermal shock stability.
SiC Cantilever Paddle Applications
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Photovoltaic Industry: Used in TOPCon cell production processes such as LPCVD and PECVD to carry silicon wafers for doping and passivation layer deposition. Also employed in diffusion furnaces for high-temperature oxidation and annealing of silicon wafers, enhancing cell conversion efficiency.
- Semiconductor Manufacturing: Serves as a core component of wafer carriers in processes like chemical vapor deposition (CVD) and etching, ensuring process stability and yield.
- New Energy Material Preparation: Used in high-temperature crystal growth furnaces for silicon carbide single crystal growth, supporting SiC ingots and resisting molten silicon corrosion environments.
- Other Industrial Fields: Functions as high-temperature supports in applications such as ceramic sintering and glass melting.
SiC Cantilever Paddle Q&A
Q1: What is a silicon carbide cantilever paddle and what is it used for?
A1: A silicon carbide cantilever paddle is a high-performance ceramic component used primarily in semiconductor and photovoltaic manufacturing to carry and transport wafers in high-temperature processes like LPCVD and diffusion, ensuring precise handling and minimal contamination under extreme conditions (up to 1350°C).
Q2: Why choose silicon carbide for cantilever paddles over traditional materials?
A2: Silicon carbide offers exceptional thermal stability (low CTE ~4.5×10⁻⁶/℃), high hardness (Mohs 9), and mechanical strength (>2500 MPa), enabling longer service life (3-5x longer than quartz), reduced maintenance costs, and superior performance in corrosive and high-temperature environments.
Tags: #SiC Cantilever Paddle, #CVD Coating, #High-Purity, #Customized, #SiC Ceramics, #Horizontal Boat Loading, #Wafer Carriers
