8inch SiC Epitaxial Substrate MOS Grade Prime Grade 4H-N Type Large Diameter
As a pivotal enabler of third-generation semiconductor advancement, our 8-inch SiC epitaxial wafers achieve dual breakthroughs in material performance and manufacturing efficiency. With a 78% larger usable area (200mm) vs. 6-inch wafers and defect density <0.2/cm² through localized production, they reduce SiC device costs by >30%. Adopted by leading Chinese manufacturers, these wafers now power EVs and smart grids, driving domestic substitution and global competitiveness.
Product specifications of 8inch SiC epitaxial wafer
| Parameter | Specification |
| Diameter | 200mm |
| Thickness | 500 ±25μm |
| Epitaxial Thickness | 5-20μm (customizable) |
| Thickness Uniformity | ≤3% |
| Doping Uniformity (n-type) | ≤5% |
| Surface Defect Density | ≤0.5/cm² |
| Surface Roughness (Ra) | ≤0.5 nm (10μm×10μm AFM scan) |
| Breakdown Field | ≥3 MV/cm |
| Electron Mobility | ≥1000 cm²/(V·s) |
| Carrier Concentration | 5×10¹³~1×10¹⁹ cm⁻³ (n-type) |
| Crystal Orientation | 4H-SiC (off-axis ≤0.5°) |
| Buffer Layer Resistivity | 1×10¹⁸ Ω·cm (n-type) |
| Automotive Certification | IATF 16949 compliant |
| HTRB Test (175°C/1000h) | Parameter drift ≤0.5% |
| Supported Devices | MOSFET, SBD, JBS, IGBT |
Key features of 8inch SiC epitaxial wafer
1. Process Innovation
- Achieves 68.66μm/h epitaxial growth rate (25% faster than imported tools) via domestic MOCVD, with <50μm warpage through low-stress bonding for automated dicing. This high-throughput process enables 20% faster production cycles compared to conventional methods.
2. Material Breakthroughs
- Graded carrier concentration (5×10¹³~1×10¹⁹cm⁻³) reduces SiC MOSFET R<sub>DS(on)</sub> to <25mΩ·mm², outperforming 6-inch wafers by 18%. The optimized doping profile also enhances switching efficiency by 15% at high frequencies (>100kHz).
3. Environmental Robustness
- Moisture-resistant passivation maintains electrical stability >1000h at 85°C/85% RH, enabling tropical energy storage systems. This performance is validated by MIL-STD-810G humidity testing protocols.
Application of 8inch SiC epitaxial wafer
1. Electric Vehicles
- Enables 800V traction inverters with 97% efficiency, 350kW peak power, and 1000km range.
2. Ultra-Fast Charging
- Integrates 1200V SiC modules in liquid-cooled chargers for 600kW/10-minute 500km recharge.
3. Aerospace Power
- Radiation-hardened modules for satellites (-55°C~200°C, 200W/in³), supporting deep-space missions.
4. Quantum Computing
- Stable operation at 4K in dilution fridges, extending qubit coherence >1000μs.
Related product recommendations
1. 2inch 3inch 4inch 6inch SiC Epitaxial Wafers 4H-N Production Grade
2. 6inch SiC Epitaxial Wafer Diameter 150mm 4H-N Type 4H-P Type For 5G Communication
FAQ of 8inch SiC epitaxial wafer
1. Q: What are the key advantages of 8-inch SiC epitaxial wafers?
A: 8-inch SiC epitaxial wafers enable higher power density and lower manufacturing costs compared to 6-inch wafers, supporting 150% more die per wafer and 30% reduced material waste.
2. Q: Which industries use 8-inch SiC epitaxial wafers?
A: Critical for EV inverters, solar inverters, and 5G base stations due to 10× higher thermal conductivity and 3× wider bandgap than silicon.
Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type, #MOS Grade, #Prime Grade, #Large Diameter
