8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type
As a core material supplier in China's SiC industry chain, ZMSH independently develops 8-inch SiC epitaxial wafers based on a mature large-diameter wafer growth technology platform. Utilizing Chemical Vapor Deposition (CVD), a uniform single-crystal film is formed on our high-purity SiC substrate. Key features include:
- Epitaxial layer thickness: 5-20μm (±3% uniformity)
- Doping concentration deviation: <5%
- Surface killer defect density: <0.5/cm²
- Low background concentration: <1×10¹⁴ cm⁻³
- BPD conversion efficiency: >99%
Compared to traditional 6-inch wafers, the 8-inch wafer increases usable area by 78%, reducing unit device costs by ~30% through automated production, making it ideal for EVs, industrial power supplies, and other large-scale applications.
Product specifications of 8inch SiC epitaxial wafer
| Parameter | Specification |
| Diameter | 200mm |
| Thickness | 500 ±25μm |
| Epitaxial Thickness | 5-20μm (customizable) |
| Thickness Uniformity | ≤3% |
| Doping Uniformity (n-type) | ≤5% |
| Surface Defect Density | ≤0.5/cm² |
| Surface Roughness (Ra) | ≤0.5 nm (10μm×10μm AFM scan) |
| Breakdown Field | ≥3 MV/cm |
| Electron Mobility | ≥1000 cm²/(V·s) |
| Carrier Concentration | 5×10¹³~1×10¹⁹ cm⁻³ (n-type) |
| Crystal Orientation | 4H-SiC (off-axis ≤0.5°) |
| Buffer Layer Resistivity | 1×10¹⁸ Ω·cm (n-type) |
| Automotive Certification | IATF 16949 compliant |
| HTRB Test (175°C/1000h) | Parameter drift ≤0.5% |
| Supported Devices | MOSFET, SBD, JBS, IGBT |
Key features of 8inch SiC epitaxial wafer
1. Precision Process Control
- Closed-loop gas flow & real-time temperature monitoring enable nanoscale thickness/doping control, 8inch SiC epitaxial wafer supporting 600-3300V device designs.
2. Ultra-Low Defect Density
- Surface defects <0.2/cm², dislocation density ~10³ cm⁻³, ensuring <1% performance degradation after 100k thermal cycles.
3. Material Compatibility
- Optimized for 4H-SiC, 8inch SiC epitaxial wafer is customizable n-type/semi-insulating layers, meeting stringent requirements for R<sub>ON</sub> (<2 mΩ·cm²) and breakdown strength (>3 MV/cm).
4. Environmental Stability
- Corrosion-resistant passivation maintains <0.5% electrical drift at 85°C/85% RH for 1000h.
Application of 8inch SiC epitaxial wafer
1. Electric Vehicles
- Core material for traction inverters & OBCs, enabling 800V platforms with 95%+ efficiency and 600kW peak charging.
2. Solar/Energy Storage
- 99% efficient string inverters reduce system losses by 50%, boosting project IRR by 3-5%.
3. Industrial Power
- 8inch SiC epitaxial wafer is enables >100kHz switching in server PFC and traction converters, achieving 100W/in³ power density.
4. 5G Communications
- Low-loss substrate for GaN RF devices, 8inch SiC epitaxial wafer is improving base station PA efficiency to 75% with multi-channel signal integrity.
Related product recommendations
ZMSH's 6inch SiC epitaxial wafers feature high-quality 4H-SiC single-crystal films grown via CVD on premium substrates, offering 5-30μm thickness with ≤3% uniformity and defect density <0.5/cm². Optimized for 650V-3.3kV power devices (MOSFET/SBD), they enable 20% lower Ron and 15% higher switching efficiency than silicon solutions, ideal for EV chargers and industrial converters.
FAQ of 8inch SiC epitaxial wafer
1. Q: What are the advantages of 8inch SiC epitaxial wafers over 6inch?
A: 8-inch wafers provide 78% more usable area, reducing chip costs by ~30% through higher yield and better economies of scale for EVs and power devices.
2. Q: How does 8inch SiC wafer defect density compare to silicon?
A: Advanced 8inch SiC epi-wafers achieve <0.5 defects/cm² vs silicon’s <0.1/cm², with BPD conversion >99% ensuring power device reliability.
Tags: #8inch SiC Epitaxial Wafer, #Silicon Carbide Substrate, #Diameter 200mm, #Thickness 500μm, #4H-N Type
