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2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

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2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

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Brand Name : ZMSH

Model Number : Crystal Seed SiC

Certification : rohs

Place of Origin : CHINA

MOQ : 10pc

Price : by case

Payment Terms : T/T

Supply Ability : 1000pc/month

Delivery Time : in 30days

Packaging Details : customzied plastic box

Polytype : 4H

Diameter : 205±0.5mm

Thickness : 600±50μm

Surface orientation error : 4°toward<11-20>±0.5°

Resistivity : NA

Flat : None

Packaging : Multi-wafer cassette

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Product Description:

2/4/6/8 inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Silicon carbide (SiC), commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Due to its superior properties, silicon carbide seed crystals have become an indispensable material in modern industry and technology.

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Features:

  • High hardness: Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool.
  • High thermal conductivity: Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics.
  • Corrosion resistance: Good resistance to chemicals, especially acids and alkalis.
  • High temperature stability: It can still maintain good physical and chemical properties in high temperature environment.
  • Low coefficient of thermal expansion: makes it less susceptible to deformation when temperature changes, making it suitable for precision applications.

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Technical Parameter

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Applications:

 1. Electronics: Widely used in the manufacture of high-power and high-frequency semiconductor devices, such as MOSFETs and diodes.  2. Abrasives and cutting tools: Used to make sandpaper, grinding stones, and cutting tools.  3. Ceramic materials: used to produce wear-resistant, high-temperature resistant ceramic parts.  4. Optoelectronic devices: Excellent performance in optoelectronic applications such as LEDs and lasers.  5. Thermal management materials: used in heat sinks and thermal interface materials to improve the heat dissipation performance of electronic devices.

2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

Customization:

Our SiC crystal seed substrate is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2/4/6/8 inch. Place of origin is China.


2/4/6/8 Inch Sic Silicon Carbide Crystal Seed Substrate 4H-N Type High Hardness P Grade R Grade D Grade

FAQ:

1. Q: How to prepare silicon carbide seed crystal 4H type?

A: The preparation of silicon carbide seed crystal 4H type usually involves a complex process, including the selection of appropriate raw materials, fine purification, control of growth conditions, etc. Common preparation methods include physical vapor transfer method (PVT). In the preparation process, it is necessary to ensure that the purity, crystal quality and crystal orientation of the seed crystal meet specific requirements.

2. Q: What is the difference between silicon carbide seed type 4H and 6H?

A: There are differences in the crystal structure between the 4H and 6H types of SIC seed crystals, which leads to differences in their physical and chemical properties. Type 4H SIC seed crystals usually have higher electron mobility and wider bandgap width, which makes it more widely used in high performance power devices. The 6H type SIC seed may show unique advantages in some specific applications, such as the optical field.

Tag: #Sic Crystal Seed Substrate, #4H-N Type, #Silicon Carbide wafer.


Product Tags:

Sic Silicon Carbide Crystal Seed Substrate

      

8 Inch SiC Substrate

      
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