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N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

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N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

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Brand Name : zmsh

Model Number : GaAs-3inch

Certification : no

Place of Origin : china

MOQ : 5pcs

Price : by case

Supply Ability : 1000pcs/month

Delivery Time : 1-4weeks

Packaging Details : 25pcs casstle in 100-grade cleaning room

material : GaAs single crystal substrates

industry : semicondutor wafer

application : semiconductor substrate, led chip, optical glass window,device substrates

method : VFG

size : 2-6inch commen

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3inch GaAs substrates, GaAs wafer for led,Gallium Arsenide crystal Wafers,Si/Zn Dopant GaAs wafer

(A compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a zinc blende crystal structure)

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GaAs) Gallium Arsenide Wafers

we develops and manufactures compound semiconductor substrates

the factory has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging.

Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.

We are always dedicated to improve the quality of currently substates and develop large size substrates.

Application:

1. Mainly used in electronics, low temperature alloys, Gallium Arsenide.

2. The primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.

3. Gallium Nitride and Indium Gallium Nitride, for semiconductor uses, produce blue and violet light-emitting diodes (LEDs) and diode lasers.

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

Specification

Parameter Guaranteed / Actual Values UOM
Growth Method: VGF
Conduct Type: S-I-N
Dopant: Undoped
Diameter: 76.2± 0.2 mm
Orientation: (100) 00± 0.50
OF location/length: EJ [ 0-1-1]± 0.50/22±2
IF location/length: EJ [ 0-1 1 ]± 0.50/11±2
Resistivity: Min: 1E8 Max: 1.03E8 Ω·cm
Mobility: Min: 5613 Max: 6000 cm2/v.s
EPD: Min: 700 Max: 800 Max:
Thickness: 625±20 µm
Edge Rounding: 0.375 mmR
Laser Marking: N/A
TTV: N/A µm
Surface Finish– front: Polished
Surface Finish –back: Etched
Epi-Ready:

Yes

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 InchN - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch

FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it's great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What's the delivery time?
(1) For the standard products such as ball lens, powell lens and collimator lens:
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.
(2) For the off-standard products, the delivery is 2 or 6 workweeks after you place the order.

Q: How to pay?
T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance on and etc..

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 5pcs-20pcs.
It depends on quantity and technics

Q: Do you have inspection report for material?
We can supply detail report for our products.

Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment . According to the quantity and shape of the product , we will take a different packaging process!

N - Type Gallium Arsenide Wafer GaAs Single Crystal Substrates 2 - 6 Inch


Product Tags:

indium arsenide wafer

      

laalo3 substrate

      
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