8inch 200mm 20-60um Lithium Tantalate LT LN Thin Wafers
LT & LN Wafer
The basic principle of SAW devices is the generation of elastic surface waves from electrical signals and their reconversion. The substrate material is a piezoelectric crystal such quartz (SiO2), lithium tantalate (LiTaO3) or lithium niobate (LiNbO3). This are single crystal materials, which are cut out after the growth process with a defined orientation to a wafer. NQW produced this wafer for SAW manufacture and R&D centres. Please find below typical specification requirements.
LT /LN Material
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LT Lithium Tantalate (LiTaO3), LN Lithium Niobate (LiNbO3)
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LT: typical cutting X112°Y/36°Y/42°Y/48°Y/ Z-cut
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LN: typical cutting 128°Y/64°Y /41°Y /Y / Z-cut
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SAW/Optical Grade, LN Black (Free of Pyro-Electric Effect)
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MgO doped LN Wafer
Piezoelectric Crystal LiTaO3 crystals/wafers
| Specification | Conventional | High Precision |
| Materials | LiTaO3(LT)/ LiNbO3 wafers | LiTaO3(LT)/LiNbO3 wafers |
| Orientation | X-112°Y,36°Y,42°Y±0.5° | X-112°Y,36°Y,42°Y±0.5° |
| Parallel | 30″ | 10'' |
| Perpendicular | 10′ | 5' |
| surface Quality | 40/20 | 20/10 |
| Wavefront Distortion | λ/4@632nm | λ/8@632nm |
| Surface Flatness | λ/4@632nm | λ/8@632nm |
| Clear Aperture | >90% | >90% |
| Chamfer | <0.2×45° | <0.2×45° |
| Thickness/Diameter Tolerance | ±0.1 mm | ±0.1 mm |
| Maximum dimensions | dia150×50mm | dia150×50mm |
Piezoelectric Crystal Lithium Tantalate LT LiTaO3 crystals
| Product Name: | Lithium tantalate (LiTaO3) crystal substrate |
| Product Description: | Lithium tantalate (LiTaO3) single crystal has a very good electro-optical, piezoelectric and pyroelectric properties, widely used in pyroelectric devices and color television. Branch crystal company specializes in producing high quality and the most competitive price high purity optical grade LiTaO3 crystal substrate |
| Technical parameters: | | Crystal structure | Hexagonal | | Lattice constant | a = 5.154 Å c = 13.783 Å | | Mp | 1650 o C | | Density | 7.45 g / cm3 | | Curie temperature | 610 o C | | Hardness | 5.5 - 6 Mohs | | Thermal expansion coefficient | aa = 1.61 x 10 -6 / k ac = 4.1 x 10 -6 / k | | Resistivity | 1015 Wm | | Permittivity | es11 / e0: 39 ~ 43 es33 / e0: 42 ~ 43 et11 / e0: 51 ~ 54 et11 / e0: 43 ~ 46 | | Color | Colorless | | Through a range of | 0.4 ~ 5.0 um | | Index of refraction | n o = 2.176 n e = 2.180 @ 633 nm | |
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Specification
| Orientation | 36°Y-cut±0.2° | 42°Y-cut±0.2° | X-cut±0.2° |
| Diameter | 100±0.3mm , |
| 1st OF Flat | 32±2mmperpendicular to X-axis±0.2° | 32±2mm, perpendicular to 112°Y±0.2° |
| 2st OF Flat | 10±2mm CW270°from 1st OF | 10±2mm CW315°from 1st OF | 10±2mm CW315° Or 270°from 1st OF |
| Thickness | 200~250±25um,300-350±25um,500±25um or by customized |
| Front surface | "+",Ra＜1nm, |
| Back surface | GC#1000, GC#2000 Lapped |
| LTV | ＜1um,at5x5mm zone |
| BOW | ≤25um |
Product display
FAQ
Q. Do you have any stock of wafer or ingots?
yes,aslike 3inch,4inch commen size substrates wafers are in stocks.
Q. Where is your company located?
Our company located in shanghai,China. factory is in wuxi city.
Q. How long will take to get the products?
Generally it will take 1~4 weeks to process and then delivery.
It is depend on the quantity and the size of the products.
Q: How about pay term ＆ delivery ?
T/T 50％deposit and left part before delivery by FOB .
Product Tags:
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8inch dia200mm LiNbO3 thin film Z-cut for Optoelectronic component Images
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