8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR POWER RF Micro-LED application
8inch 100mm 150mm 200mm 300mm GAN-ON-SI EPI-WAFERS For Power Application
GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. Gallium nitride (GaN) has been widely used in power devices and blue light-emitting diodes due to its wide energy gap.
Introduction
There is a growing need for energy saving and advancements in information and communication systems. To meet these needs, we have developed a wide-bandgap semiconductor substrate with gallium nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon substrates, we can produce large, inexpensive semiconductor substrates for next-generation devices
.
Target: For home appliances: switchgears and inverters with breakdown voltages in the hundreds. For mobile phone base stations: high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than other silicon carbide or sapphire substrates, and we can provide GaN devices tailored to customer requirements.
Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in a crystal that does not contain electrons (semiconductor materials with a band gap larger than silicon are often referred to as wide band gap semiconductors). Wide-bandgap material with good optical transparency and high electrical breakdown voltage
Heterojunction
is a stack of different materials. Generally speaking, in the semiconductor field, relatively thin films of semiconductor materials with different compositions are stacked. In the case of mixed crystals, heterojunctions with atomically smooth interfaces and good interface properties are obtained. Due to these interfaces, a layer of two-dimensional electron gas with high electron mobility is created
Specs for GaN-on-Si Power application Epi-wafers
Product Specification
Items Values/Scope
Substrate Si
Wafer diameter 100mm,150mm,200mm,300mm
Epi-layer thickness 2-7 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlXGa1-XN, 0<X<1
Cap layer In-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density >9E12/cm2 (20nm Al0.25GaN, 150mm)
Electron mobility >1800 cm2 /Vs (20nm Al0.25GaN, 150mm)
F Specs for GaN-on-Si RF application Epi-wafersApplicems Values/Scope
Substrate HR_Si / SiC
Wafer diameter 100mm, 150mm for SiC,
100mm, 150mm, 200mm for HR_Si
Epi-layer thickness 2-3 μm
Wafer bow <30 μm, Typical
Surface Morphology RMS<0.5nm in 5×5 μm²
Barrier AlGaN or AlN or InAlN
Cap layer In-situ SiN or GaN
• Core technical team members all have 10+ years experience in GaN
Capacity
• 3300m2 class 1000 cleanroom
• 200k pcs/year for 150mm GaN epiwafers
Product
Diversity
• GaN-on-Si (up to 300mm)
• GaN-on-SiC (up to 150mm)
• GaN-on-HR_Si (up to 200mm)
• GaN-on-Sapphire (up to 150mm)
• GaN-on-GaN
IP & Quality • ~400 patent filed in China, US, Japan etc.
with >100 granted
• License of ~80 patents from imec
• ISO9001:2015 certificate for design and
manufacture of GaN epi material
FAQ:
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs.
(2) For customized products, the MOQ is 5pcs up.
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 or 3 weeks after you place the order.
Q: Do you have standard products?
A: Our standard products in stock.as like 4inch 0.65mm,0.5mm polished wafer.
Q: How to pay?
A:50％deposit, left before delivery T/T,
Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and optical coating for your optical
components based on your needs.
Product Tags:
|
|
4Inch 6INCH GaN-on-Si GaN-on-SiC Epi Wafers For RF Application Images
|
